 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD ESD Protection Diode SMD Diodes Specialist CPDV5-3V3UP RoHS Device Features IEC61000-4-2 (ESD) 15 kV(Contact),20kV(Air). Working voltage: 3.3V Low leakage current. Low operating and clamping voltages. 0.053(1.35) 0.045(1.15) 0.087(2.20) 0.079(2.00) SOT-353 Mechanical data Case: SOT-353 standard package ,molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Mounting position: Any Weight: 0.0070 gram (approx.). 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.039(1.00) 0.035(0.90) 0.096(2.45) 0.085(2.15) Circuit Diagram 5 4 0.014(0.35) 0.006(0.15) 0.004(0.10)max 0.010(0.26) 1 2 3 Dimensions in inches and (millimeter) Maximum Rating (at TA=25 C unless otherwise noted) O Parameter Peak pulse power ( tp = 8/20 us) Peak pulse current ( tp = 8/20 us) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Operating temperature Storage temperature O Symbol PPP IPP VESD Tj TSTG Value 40 5 20 15 -55 to +125 -55 to +125 Unit W A kV O C C O Electrical Characteristics (at TA=25 C unless otherwise noted) Parameter Reverse stand-off voltage Punch-through voltage Snap-back voltage Reverse leakage current IPT = 2uA ISB = 50mA VRWM = 3.3V IPP = 1 A, tp=8/20us Clamping voltage IPP = 5 A, tp=8/20us Reverse clamping voltage Junction capacitance IPPR = 1 A, tp=8/20us VR = 0 V, f = 1MHz VC VCR Cj 12 8.0 2.4 16 V V pF Conditions Symbol Min Typ Max Unit VRWM VPT VSB IR VC 3.5 2.8 0.05 0.5 5.5 3.3 V V V uA V REV:B QW-BP025 Page 1 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CPDV5-3V3UP) Fig. 1 - Non-repetitive max. peak pulse power vs. pulse time Max. peak pulse power-PPP(kW ) 1 Fig. 2 - Power rating derating curve 110 100 90 80 Power rating (%) 100 70 60 50 40 30 20 10 0.1 0.01 0.1 1 10 1000 0 0 25 50 75 100 O 125 150 Pulse duration-tp(us) Ambient temperature ( C ) Fig.3 - Clamping voltage vs. peak pulse current 16 14 10 12 Fig.4 - Forward voltage vs. Forward current Clamping voltage (V) Forward voltage (V) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Waveform Parameters: tr=8us td=20us Waveform Parameters: tr=8us td=20us 8 6 4 2 0 0 1 2 3 4 5 6 Peak pulse current(A) Forward current(A) Fig.5 - Junction capacitance vs. reverse voltage 20 Normalized capacitance - Cj (pF) 16 12 8 4 0 0 1 2 3 4 Reverse voltage (V) REV:B QW-BP025 Page 2 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 2.20 0.10 0.087 0.004 B 2.40 0.10 0.094 0.004 C 1.35 0.10 0.053 0.004 d 1.55 0.10 0.061 0.004 D 178 1 7.008 0.040 D1 50.0 MIN. 1.969 MIN. D2 13.0 0.20 0.512 0.008 SOT-353 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.002 W 8.00 0.30 0.315 0.012 W1 14.4 MAX. 0.567 MAX SOT-353 (mm) (inch) REV:B QW-BP025 Page 3 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Marking Code 5 4 Part Number CPDV5-3V3UP Marking Code E3V3 . 1 E3V3 2 3 Suggested PAD Layout C SOT-353 SIZE (mm) A B C D E 0.80 0.35 1.30 1.94 2.74 (inch) 0.031 D E A 0.014 0.051 0.076 0.108 B Standard Package Qty per Reel Case Type (Pcs) SOT-353 3000 Reel Size (inch) 7 REV:B QW-BP025 Page 4 Comchip Technology CO., LTD. |
Price & Availability of CPDV5-3V3UP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |